STM32：Flash擦除与读写操作（HAL库） / 四六文摘

应用平台：STM32F030F4P6ST官方库：STM32Cube_FW_F0_V1.9.0背景知识绝大多数的单片机和微控制器（ARM,x86)，地址空间都是以字节为单位的，也就是说一个地址是一个字节。Flash存储器有个特点，就是只能写0，不能写1。所以如果原来的地址有数据了，意味着有一些位为0，这些位就相当于无效了。所以必须写之前确保他们都为1，只有擦除才可以。另外每次擦除都必须擦除一个4K大小的扇区，这是flash的特性所决定的。对Flash操作前必需打开内部振荡器。参考：stm32的学习—FLASH的操作和使用STM32F030F4P6的Flash存储简介STM32F030F4P6硬件配置： FLASH (16KB) RAM (4KB)（包含4个扇区，1个扇区包含4个页，每页有1Kbyte空间）用户可以对Flash进行program 和 erase 操作。Main Flash memory programmingThe main Flash memory can be programmed 16 bits at a time.Flash memory eraseThe Flash memory can be erased page by page or completely (Mass Erase).

Flash memory addressesSize(byte)NameDescription0x0800 0000 - 0x0800 03FF1 KbytePage 0Sector 00x0800 0400 - 0x0800 07FF1 KbytePage 1Sector 00x0800 0800 - 0x0800 0BFF1 KbytePage 2Sector 00x0800 0C00 - 0x0800 0FFF1 KbytePage 3Sector 00x0800 1000 - 0x0800 13FF1 KbytePage 4Sector 10x0800 1400 - 0x0800 17FF1 KbytePage 5Sector 10x0800 1800 - 0x0800 1BFF1 KbytePage 6Sector 10x0800 1C00 - 0x0800 1FFF1 KbytePage 7Sector 10x0800 2000 - 0x0800 23FF1 KbytePage 8Sector 20x0800 2400 - 0x0800 27FF1 KbytePage 9Sector 20x0800 2800 - 0x0800 2BFF1 KbytePage 10Sector 20x0800 2C00 - 0x0800 2FFF1 KbytePage 11Sector 20x0800 3000 - 0x0800 33FF1 KbytePage 12Sector 30x0800 3400 - 0x0800 37FF1 KbytePage 13Sector 30x0800 3800 - 0x0800 3BFF1 KbytePage 14Sector 30x0800 3C00 - 0x0800 3FFF1 KbytePage 15Sector 3STM32F030F4P6的Flash读写参考代码（HAL库）/* Base address of the Flash sectors */#define ADDR_FLASH_PAGE_0 ((uint32_t)0x08000000) /* Base @ of Page 0, 1 Kbyte */#define ADDR_FLASH_PAGE_1 ((uint32_t)0x08000400) /* Base @ of Page 1, 1 Kbyte */#define ADDR_FLASH_PAGE_2 ((uint32_t)0x08000800) /* Base @ of Page 2, 1 Kbyte */#define ADDR_FLASH_PAGE_3 ((uint32_t)0x08000C00) /* Base @ of Page 3, 1 Kbyte */#define ADDR_FLASH_PAGE_4 ((uint32_t)0x08001000) /* Base @ of Page 4, 1 Kbyte */#define ADDR_FLASH_PAGE_5 ((uint32_t)0x08001400) /* Base @ of Page 5, 1 Kbyte */#define ADDR_FLASH_PAGE_6 ((uint32_t)0x08001800) /* Base @ of Page 6, 1 Kbyte */#define ADDR_FLASH_PAGE_7 ((uint32_t)0x08001C00) /* Base @ of Page 7, 1 Kbyte */#define ADDR_FLASH_PAGE_8 ((uint32_t)0x08002000) /* Base @ of Page 8, 1 Kbyte */#define ADDR_FLASH_PAGE_9 ((uint32_t)0x08002400) /* Base @ of Page 9, 1 Kbyte */#define ADDR_FLASH_PAGE_10 ((uint32_t)0x08002800) /* Base @ of Page 10, 1 Kbyte */#define ADDR_FLASH_PAGE_11 ((uint32_t)0x08002C00) /* Base @ of Page 11, 1 Kbyte */#define ADDR_FLASH_PAGE_12 ((uint32_t)0x08003000) /* Base @ of Page 12, 1 Kbyte */#define ADDR_FLASH_PAGE_13 ((uint32_t)0x08003400) /* Base @ of Page 13, 1 Kbyte */#define ADDR_FLASH_PAGE_14 ((uint32_t)0x08003800) /* Base @ of Page 14, 1 Kbyte */#define ADDR_FLASH_PAGE_15 ((uint32_t)0x08003C00) /* Base @ of Page 15, 1 Kbyte *//* Private define ------------------------------------------------------------*/#define FLASH_USER_START_ADDR ADDR_FLASH_PAGE_15 /* Start @ of user Flash area */#define FLASH_USER_END_ADDR ADDR_FLASH_PAGE_15 + FLASH_PAGE_SIZE /* End @ of user Flash area */#define DATA_32 ((uint32_t)0x12345678)/*Variable used for Erase procedure*/static FLASH_EraseInitTypeDef EraseInitStruct;uint32_t Address = 0;/*** @brief Main program* @param None* @retval None*/int main(void){/* STM32F0xx HAL library initialization:- Configure the Flash prefetch- Systick timer is configured by default as source of time base, but usercan eventually implement his proper time base source (a general purposetimer for example or other time source), keeping in mind that Time baseduration should be kept 1ms since PPP_TIMEOUT_VALUEs are defined andhandled in milliseconds basis.- Low Level Initialization*/HAL_Init();/* Configure the system clock to 48 MHz */SystemClock_Config();/* Unlock the Flash to enable the flash control register access *************/HAL_FLASH_Unlock();/* Erase the user Flash area(area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR) ***********//* Fill EraseInit structure*/EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;EraseInitStruct.PageAddress = FLASH_USER_START_ADDR;EraseInitStruct.NbPages = (FLASH_USER_END_ADDR - FLASH_USER_START_ADDR) / FLASH_PAGE_SIZE;if (HAL_FLASHEx_Erase(&EraseInitStruct, &PageError) != HAL_OK){/*Error occurred while page erase.User can add here some code to deal with this error.PageError will contain the faulty page and then to know the code error on this page,user can call function 'HAL_FLASH_GetError()'*//* Infinite loop */while (1){/* User doing something here */}}/* Program the user Flash area word by word(area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR) ***********/Address = FLASH_USER_START_ADDR;while (Address < FLASH_USER_END_ADDR){if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, Address, DATA_32) == HAL_OK){Address = Address + 4;}else{/* Error occurred while writing data in Flash memory.User can add here some code to deal with this error */while (1){/* User doing something here */}}}/* Lock the Flash to disable the flash control register access (recommendedto protect the FLASH memory against possible unwanted operation) *********/HAL_FLASH_Lock();/* Check if the programmed data is OKMemoryProgramStatus = 0: data programmed correctlyMemoryProgramStatus != 0: number of words not programmed correctly ******/Address = FLASH_USER_START_ADDR;MemoryProgramStatus = 0x0;while (Address < FLASH_USER_END_ADDR){data32 = *(__IO uint32_t *)Address;if (data32 != DATA_32){MemoryProgramStatus++;}Address = Address + 4;}/*Check if there is an issue to program data*/if (MemoryProgramStatus == 0){/* User doing something here */}else{while (1){/* User doing something here */}}/* Infinite loop */while (1){}}关键字：STM32 Flash擦除读写操作 HAL库编辑：什么鱼引用地址：http://news.eeworld.com.cn/mcu/2018/ic-news081940846.html本网站转载的所有的文章、图片、音频视频文件等资料的版权归版权所有人所有，本站采用的非本站原创文章及图片等内容无法一一联系确认版权者。如果本网所选内容的文章作者及编辑认为其作品不宜公开自由传播，或不应无偿使用，请及时通过电子邮件或电话通知我们，以迅速采取适当措施，避免给双方造成不必要的经济损失。发表于 2020-04-29

STM32：Flash擦除与读写操作（HAL库）

相关推荐